onsemi · FETs & Power MOSFETs · MPN FDMS86310
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.29nF |
N-Channel 80V 50A 96W Surface Mount Power-56-8