onsemi FDMS86310

onsemi · FETs & Power MOSFETs · MPN FDMS86310

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage80V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.29nF

Technical details

N-Channel 80V 50A 96W Surface Mount Power-56-8

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