onsemi · FETs & Power MOSFETs · MPN FDMS86263P-23507X
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 4.4A;22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W;104W |
| RDS(on) | 53mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.905nF |
150V 4V 53mΩ@10V 1 P-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS