onsemi FDMS86255ET150

onsemi · FETs & Power MOSFETs · MPN FDMS86255ET150

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Specifications

Gate Charge(Qg)29nC@6V
Drain to Source Voltage150V
Current - Continuous Drain(Id)63A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)12.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.48nF

Technical details

N-Channel 150V 63A 136W Surface Mount Power-56-8

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