onsemi · FETs & Power MOSFETs · MPN FDMS86252
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF |
| RDS(on) | 51mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 678pF |
150V 16A 2V 69W 51mΩ@10V 1 N-channel Power-56 Single FETs, MOSFETs RoHS