onsemi · FETs & Power MOSFETs · MPN FDMS86250
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| Gate Charge(Qg) | 25nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 165pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.9V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.8pF |
| RDS(on) | 19mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.75nF |
| Type | N-Channel |
150V 30A 2.9V 96W 19mΩ@10V 1 N-channel N-Channel Power56-8 Single FETs, MOSFETs RoHS