onsemi · FETs & Power MOSFETs · MPN FDMS8622
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| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 16.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 31W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 56mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
100V 16.5A 2V 31W 56mΩ@10V 1 N-channel PQFN-8(5x6) Single FETs, MOSFETs RoHS