onsemi · FETs & Power MOSFETs · MPN FDMS86202ET120
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Output Capacitance(Coss) | 460pF |
| Current - Continuous Drain(Id) | 102A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.1V |
| Pd - Power Dissipation | 187W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.275nF |
| Type | N-Channel |
120V 102A 3.1V 187W 6mΩ@10V 1 N-channel N-Channel Power56-8 Single FETs, MOSFETs RoHS