onsemi FDMS86200

onsemi · FETs & Power MOSFETs · MPN FDMS86200

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Specifications

Gate Charge(Qg)46nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)16pF
RDS(on)21mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)2.715nF
TypeN-Channel

Technical details

N-Channel 150V Surface Mount PDFN-8(4.9x5.8)

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