onsemi FDMS86182

onsemi · FETs & Power MOSFETs · MPN FDMS86182

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)1.105nF
Current - Continuous Drain(Id)78A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)7.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.88nF
TypeN-Channel

Technical details

N-Channel 100V 78A 83W Power56-8

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