onsemi FDMS86181

onsemi · FETs & Power MOSFETs · MPN FDMS86181

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Specifications

Gate Charge(Qg)59nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)124A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)12mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)4.125nF
TypeN-Channel

Technical details

N-Channel 100V 124A 125W Power56-8

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