onsemi FDMS86180

onsemi · FETs & Power MOSFETs · MPN FDMS86180

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Specifications

Gate Charge(Qg)54nC@6V
Drain to Source Voltage100V
Current - Continuous Drain(Id)151A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)3.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.215nF

Technical details

N-Channel 100V 151A 138W Power56-8

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