onsemi · FETs & Power MOSFETs · MPN FDMS86163P-23507X
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| Gate Charge(Qg) | 59nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 7.9A;50A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W;104W |
| RDS(on) | 22mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.085nF |
100V 4V 22mΩ@10V 1 P-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS