onsemi · FETs & Power MOSFETs · MPN FDMS86105
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 27mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 483pF |
100V 26A 2.8V 48W 27mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS