onsemi · FETs & Power MOSFETs · MPN FDMS86103L
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 81A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.71nF |
100V 81A 1.9V 104W 8mΩ@10V 1 N-channel PDFN-8(5.9x5.2) Single FETs, MOSFETs RoHS