onsemi FDMS86101DC

onsemi · FETs & Power MOSFETs · MPN FDMS86101DC

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.7V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)7.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.135nF

Technical details

N-Channel 100V 60A 125W Surface Mount PQFN-8(5x6)

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