onsemi · FETs & Power MOSFETs · MPN FDMS8570S
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| Gate Charge(Qg) | 42nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 662pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 94pF |
| RDS(on) | 3.1mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.825nF |
| Type | N-Channel |
25V 60A 2.2V 48W 3.1mΩ@4.5V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS