onsemi FDMS8560S

onsemi · FETs & Power MOSFETs · MPN FDMS8560S

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Specifications

Drain to Source Voltage25V
Gate Charge(Qg)68nC@10V
Output Capacitance(Coss)1.27nF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)138pF
RDS(on)2.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.35nF
TypeN-Channel

Technical details

25V 70A 2.2V 65W 2.1mΩ@4.5V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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