onsemi · FETs & Power MOSFETs · MPN FDMS8460
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 49A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.205nF |
40V 49A 1.9V 2.5W 2.2mΩ@10V 1 N-channel PQFN-8(4.9x5.8) Single FETs, MOSFETs RoHS