onsemi · FETs & Power MOSFETs · MPN FDMS8090
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| Current - Continuous Drain(Id) | 40A |
|---|---|
| RDS(on) | 20mΩ@6V |
| Pd - Power Dissipation | 2.2W |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.8nF |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
40A 20mΩ@6V 2.2W 3V 2 N-Channel Power-56 FET, MOSFET Arrays RoHS