onsemi · FETs & Power MOSFETs · MPN FDMS8050ET30
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| Output Capacitance(Coss) | 4.455nF |
|---|---|
| Pd - Power Dissipation | 180W |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 204nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| RDS(on) | 0.65mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 16.15nF |
180W 30V 1.8V 0.65mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS