onsemi FDMS8050

onsemi · FETs & Power MOSFETs · MPN FDMS8050

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Specifications

Configuration-
Gate Charge(Qg)285nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)200A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation156W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)0.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)22.61nF

Technical details

30V 200A 1.8V 156W 0.65mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS

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