onsemi · FETs & Power MOSFETs · MPN FDMS8050
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 285nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 310pF |
| RDS(on) | 0.65mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 22.61nF |
30V 200A 1.8V 156W 0.65mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS