onsemi FDMS7682

onsemi · FETs & Power MOSFETs · MPN FDMS7682

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)640pF
Current - Continuous Drain(Id)59A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)75pF
RDS(on)10.4mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.885nF
TypeN-Channel

Technical details

N-Channel 30V 59A 33W Power56-8

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