onsemi FDMS7678

onsemi · FETs & Power MOSFETs · MPN FDMS7678

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation41W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.41nF

Technical details

30V 26A 41W Surface Mount Power-56-8

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