onsemi FDMS7672

onsemi · FETs & Power MOSFETs · MPN FDMS7672

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Specifications

Gate Charge(Qg)44nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)19A;28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W;48W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.96nF

Technical details

N-Channel 30V 19A 28A 2.5W 48W Surface Mount PQFN-8(5x6)

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