onsemi FDMS7600AS

onsemi · FETs & Power MOSFETs · MPN FDMS7600AS

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Specifications

Gate Charge(Qg)20nC@10V;81nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A;40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V;3V
Pd - Power Dissipation2.21W;2.51W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)2.8mΩ@10V
Number-
Input Capacitance(Ciss)1.315nF;5.265nF

Technical details

30V 2.8mΩ@10V Power-56-8 Single FETs, MOSFETs RoHS

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