onsemi · FETs & Power MOSFETs · MPN FDMS6673BZ
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 82A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 73W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.045nF |
| RDS(on) | 6.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.915nF |
30V 82A 1.8V 73W 6.8mΩ@10V 1 P-Channel Power-56-8 Single FETs, MOSFETs RoHS