onsemi · FETs & Power MOSFETs · MPN FDMS5362LF085
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 21nC@10V |
| Output Capacitance(Coss) | 79pF |
| Current - Continuous Drain(Id) | 17.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 41.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 33mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 878pF |
| Type | N-Channel |
60V 17.6A 3V 41.7W 33mΩ@10V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS