onsemi · FETs & Power MOSFETs · MPN FDMS5361L-F085
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 176pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.98nF |
| Type | N-Channel |
60V 35A 3V 75W 15mΩ@10V 1 N-channel N-Channel Power-56 Single FETs, MOSFETs RoHS