onsemi · FETs & Power MOSFETs · MPN FDMS4D5N08LC
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| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 113.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 4.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.1nF |
80V 116A 113.6W Surface Mount Power-56