onsemi FDMS4D4N08C

onsemi · FETs & Power MOSFETs · MPN FDMS4D4N08C

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Specifications

Drain to Source Voltage80V
Current - Continuous Drain(Id)123A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
RDS(on)4.3mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)50pF
Number1 N-channel
Input Capacitance(Ciss)4.09nF

Technical details

80V 123A 125W Power56-8

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