onsemi · FETs & Power MOSFETs · MPN FDMS4D0N12C
No reviews yet — be the first to review onsemi FDMS4D0N12C.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 114A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 106W |
| Reverse Transfer Capacitance (Crss@Vds) | 24pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.46nF |
120V 114A 4V 106W 4mΩ@10V 1 N-channel PDFN-8(5.2x6.2) Single FETs, MOSFETs RoHS