onsemi FDMS4435BZ

onsemi · FETs & Power MOSFETs · MPN FDMS4435BZ

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)390pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)385pF
RDS(on)37mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.05nF
TypeP-Channel

Technical details

P-Channel 30V 18A 39W Surface Mount PQFN-8(5x6)

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