onsemi FDMS3672

onsemi · FETs & Power MOSFETs · MPN FDMS3672

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation78W
Reverse Transfer Capacitance (Crss@Vds)135pF
RDS(on)23mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.68nF

Technical details

100V 22A 2V 78W 23mΩ@10V 1 N-channel Power-56-8 Single FETs, MOSFETs RoHS

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