onsemi · FETs & Power MOSFETs · MPN FDMS3669S
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| Current - Continuous Drain(Id) | 13A;18A |
|---|---|
| Pd - Power Dissipation | - |
| RDS(on) | 10mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Drain to Source Voltage | 30V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.605nF |
| Gate Charge(Qg) | 24nC@10V |
| Operating Temperature | -55℃~+150℃ |
10mΩ@10V 2.7V 2 N-Channel Power-56-8 FET, MOSFET Arrays RoHS