onsemi FDMS3668S

onsemi · FETs & Power MOSFETs · MPN FDMS3668S

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Specifications

Current - Continuous Drain(Id)13A;18A
Pd - Power Dissipation-
RDS(on)8mΩ@10V
Gate Threshold Voltage (Vgs(th))2.7V
Drain to Source Voltage30V
Number2 N-Channel
Input Capacitance(Ciss)1.765nF
Gate Charge(Qg)-
Operating Temperature-

Technical details

8mΩ@10V 2.7V 2 N-Channel PQFN-8(5x6) FET, MOSFET Arrays RoHS

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