onsemi · FETs & Power MOSFETs · MPN FDMS3660S
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| Current - Continuous Drain(Id) | 145A |
|---|---|
| RDS(on) | 11mΩ@4.5V |
| Pd - Power Dissipation | 2.5W |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 5.493nF |
| Gate Charge(Qg) | 87nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 1.22nF |
145A 11mΩ@4.5V 2.5W 2.7V 2 N-Channel PQFN-8(5x6) FET, MOSFET Arrays RoHS