onsemi · FETs & Power MOSFETs · MPN FDMS3660AS
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 13A;30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | - |
| RDS(on) | 8mΩ@10V |
| Input Capacitance(Ciss) | 2.23nF |
30V 2.7V 8mΩ@10V Power-56-8 Single FETs, MOSFETs