onsemi FDMS3622S

onsemi · FETs & Power MOSFETs · MPN FDMS3622S

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Specifications

Gate Charge(Qg)26nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)17.5A;34A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)5mΩ@10V
Number-
Input Capacitance(Ciss)1.57nF

Technical details

25V 2V 1W 5mΩ@10V Power-56 Single FETs, MOSFETs RoHS

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