onsemi · FETs & Power MOSFETs · MPN FDMS3604S
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| Configuration | Half-Bridge |
|---|---|
| Current - Continuous Drain(Id) | 13A;23A |
| RDS(on) | 8mΩ@10V |
| Pd - Power Dissipation | 2.2W;2.5W |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF;155pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.785nF;4.31nF |
| Gate Charge(Qg) | 29nC@10V;66nC@10V |
| Operating Temperature | -55℃~+150℃ |
8mΩ@10V 1.1V 2 N-Channel PQFN-8(5x6) FET, MOSFET Arrays RoHS