onsemi FDMS2D5N08C

onsemi · FETs & Power MOSFETs · MPN FDMS2D5N08C

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)60nC@10V
Current - Continuous Drain(Id)166A
Output Capacitance(Coss)1.48nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.9V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)59pF
RDS(on)2.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.455nF
TypeN-Channel

Technical details

80V 166A 2.9V 138W 2.2mΩ@10V 1 N-channel N-Channel Power56-8 Single FETs, MOSFETs RoHS

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