onsemi · FETs & Power MOSFETs · MPN FDMS039N08B
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 80V |
| Gate Charge(Qg) | 77nC@10V |
| Output Capacitance(Coss) | 881pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 3.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.715nF |
80V 100A 4.5V 104W 3.2mΩ@10V 1 N-channel N-Channel Power-56 Single FETs, MOSFETs RoHS