onsemi FDMS0312S

onsemi · FETs & Power MOSFETs · MPN FDMS0312S

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)46nC@10V
Current - Continuous Drain(Id)19A;42A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W;46W
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.82nF

Technical details

30V 3V 4.9mΩ@10V 1 N-channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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