onsemi FDMS0310AS

onsemi · FETs & Power MOSFETs · MPN FDMS0310AS

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)37nC@10V
Current - Continuous Drain(Id)19A;22A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W;41W
RDS(on)4.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.28nF

Technical details

30V 3V 4.3mΩ@10V 1 N-channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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