onsemi · FETs & Power MOSFETs · MPN FDMS030N06B
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 22.1A;100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 2.5W;104W |
| RDS(on) | 3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.56nF |
60V 4.5V 3mΩ@10V 1 N-channel PQFN-8(5x6) Single FETs, MOSFETs RoHS