onsemi FDMS0309AS

onsemi · FETs & Power MOSFETs · MPN FDMS0309AS

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Specifications

Output Capacitance(Coss)815pF
Pd - Power Dissipation50W
Configuration-
Gate Charge(Qg)34nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
RDS(on)3.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)85pF
Number1 N-channel
Input Capacitance(Ciss)2.255nF

Technical details

50W 30V 1.6V 3.5mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS

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