onsemi FDMS0308AS

onsemi · FETs & Power MOSFETs · MPN FDMS0308AS

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Specifications

Gate Charge(Qg)47nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.085nF
Current - Continuous Drain(Id)109A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)125pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

30V 109A 3V 50W 2.8mΩ@10V 1 N-channel N-Channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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