onsemi FDMS0306AS

onsemi · FETs & Power MOSFETs · MPN FDMS0306AS

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)57nC@10V
Current - Continuous Drain(Id)26A;49A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W;59W
RDS(on)2.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.55nF

Technical details

30V 3V 2.4mΩ@10V 1 N-channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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