onsemi FDMS015N04B

onsemi · FETs & Power MOSFETs · MPN FDMS015N04B

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Specifications

Gate Charge(Qg)118nC
Drain to Source Voltage40V
Output Capacitance(Coss)3.72nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)162pF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.725nF
TypeN-Channel

Technical details

N-Channel 40V 100A 104W Power56-8

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