onsemi FDMS007N08LC

onsemi · FETs & Power MOSFETs · MPN FDMS007N08LC

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage80V
Current - Continuous Drain(Id)14A;84A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W;92.6W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)4.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF

Technical details

80V 2.5V 4.9mΩ@10V 1 N-channel PQFN-8(5x6) Single FETs, MOSFETs RoHS

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