onsemi FDMS003N08C

onsemi · FETs & Power MOSFETs · MPN FDMS003N08C

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Specifications

Gate Charge(Qg)73nC@10V
Drain to Source Voltage80V
Current - Continuous Drain(Id)147A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
RDS(on)3.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)80pF
Number1 N-channel
Input Capacitance(Ciss)5.35nF

Technical details

N-Channel 80V 147A 125W Surface Mount PQFN-8

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